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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3565 description high collector-emitter breakdown voltage- : v (br)ceo = 300v(min) good linearity of h fe low saturation voltage applications designed for use in high frequency high voltage amplifier and tv viedo output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 0.2 a p c collector power dissipation @ t c =25 15 w t j junction temperature 150 t stg storage temperature range -40~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3565 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 10 a ; i e = 0 300 v v (br)ceo collector-emitter breakdown voltage i c = 1ma ; r be = 300 v v (br)ebo emitter-base breakdown vltage i e = 10 a ; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 20ma; i b = 2ma 1.5 v i ceo collector cutoff current v ce = 250v; r be = 1 a h fe dc current gain i c = 10ma; v ce = 10v 30 200 f t current-gain?bandwidth product i c = 10ma; v ce = 20v 80 mhz isc website www.iscsemi.cn 2 |
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